Keypoint
-
Miniature High-Performance Optical Detection Device Using MEMS
-
Leveraging Silicon-Based Infrared Detection Capability for Potential Large-Scale Deployment
Benefit
Since silicon has a band gap energy of approximately 1.1 eV, it does not have sensitivity to infrared light with wavelengths longer than 1.1 µm on its own. Therefore, it was necessary to detect infrared light with wavelengths longer than this using compound semiconductors. However, by utilizing the Schottky barrier formed at the interface between metal and silicon, it becomes possible to create sub-bandgap barriers, enabling the detection of infrared light with silicon devices. Furthermore, by performing fine processing on the metal and exciting surface plasmon resonance upon light incidence, it is possible to improve the light detection sensitivity and provide spectral functionality to the light-receiving elements, enabling the development of various infrared light sensors.
In addition to being a simple alternative as a material, silicon is highly stable against temperature and humidity variations compared to traditional infrared detection materials, and it is also cost-effective. There is also a significant advantage in being able to leverage the vast legacy of the semiconductor industry. This opens up the path for system integration and high functionality through mass production and on-chip integration with memory and processors.