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MEMS infrared photodetector


MEMS infrared photodetector

Organization Name

Tetsuo Kan, The University of Electro-Communications Graduate School of Informatics and Engineering Department of Mechanical and Intelligent Systems Engineering Professor

Technical field

In Kan Laboratory at the University of Electro-Communications, we are conducting research on unique MEMS optical sensors and devices by fabricating micro- to nano-sized metal diffraction gratings and pillar structures on silicon. Normally, silicon alone does not have sensitivity to infrared light, but by utilizing the Schottky barrier formed at the interface between silicon and metal, it becomes possible to electrically detect infrared light with silicon. By absorbing externally incident light with diffraction gratings or pillar structures formed through MEMS processes, it is also possible to selectively detect specific wavelengths or polarizations of light. By utilizing these features, it is possible to construct infrared light detectors using silicon-based devices, as well as to develop spectroscopic sensors, gas sensors, and chemical sensors. Furthermore, by using silicon as the substrate material, it has the advantage of being able to utilize existing semiconductor manufacturing processes and leverage the legacy of semiconductors. This is a highly efficient method in terms of mass production and system integration. In this way, Kan Laboratory is utilizing unique MEMS principles to advance research on ultra-compact, cost-effective optical sensors with simplified manufacturing processes.

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Details

Keypoint

  • Miniature High-Performance Optical Detection Device Using MEMS
  • Leveraging Silicon-Based Infrared Detection Capability for Potential Large-Scale Deployment

Benefit

Since silicon has a band gap energy of approximately 1.1 eV, it does not have sensitivity to infrared light with wavelengths longer than 1.1 µm on its own. Therefore, it was necessary to detect infrared light with wavelengths longer than this using compound semiconductors. However, by utilizing the Schottky barrier formed at the interface between metal and silicon, it becomes possible to create sub-bandgap barriers, enabling the detection of infrared light with silicon devices. Furthermore, by performing fine processing on the metal and exciting surface plasmon resonance upon light incidence, it is possible to improve the light detection sensitivity and provide spectral functionality to the light-receiving elements, enabling the development of various infrared light sensors.

In addition to being a simple alternative as a material, silicon is highly stable against temperature and humidity variations compared to traditional infrared detection materials, and it is also cost-effective. There is also a significant advantage in being able to leverage the vast legacy of the semiconductor industry. This opens up the path for system integration and high functionality through mass production and on-chip integration with memory and processors.

Market Application

If it is deployed as a spectrometer, it is theoretically possible to incorporate it into portable devices such as smartphones, taking advantage of its small size. It offers excellent portability and enables the checking of the quality of everyday items such as food. If pixel array integration is further advanced in the future, it holds the potential to expand into acquiring spectral information in the two-dimensional spatial domain, targeting hyperspectral cameras/multispectral cameras, for example. Since silicon can detect infrared light, it is also conceivable to apply it to infrared measurement systems for bio-signals by integrating it with LSI signal processing circuits.

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